features trenchfet power mosfet 175 c rated maximum junction temperature applications automotive such as: ? high-side switch ? motor drives ? 12-v battery termination is pb-free SUD08P06-155L vishay siliconix new product document number: 73209 s-50385?rev. a, 07-mar-05 www.vishay.com 1 p-channel 60-v (d-s), 175 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) q g (typ) 60 0.155 @ v gs = ? 10 v ? 8.4 12 5 ? 60 0.280 @ v gs = ? 4.5 v ? 7.4 12.5 to-252 s gd top view drain connected to tab s g d p-channel mosfet ordering information: SUD08P06-155L?e3 (lead (pb)-free) absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d ? 8.4 c on ti nuous d ra i n c urren t (t j = 175 c) t c = 100 c i d ? 6 pulsed drain current i dm ? 18 a continuing source current (diode conduction) i s ? 8.4 avalanche current i as ? 12 single-pulse a valanche energy l = 0.1 mh e as 7.2 mj maximum power dissipation t c = 25 c p d 25 a w maximum power dissipation t a = 25 c p d 2 b w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit jtitabit b t 10 sec r 20 25 junction-to-ambient b steady state r thja 62 75 c/w junction-to-case r thjc 5 6 c/w notes a. see soa curve for voltage derating. b. surface mounted on 1? x 1? fr4 board. www.datasheet.co.kr datasheet pdf - http://www..net/
SUD08P06-155L vishay siliconix new product www.vishay.com 2 document num ber: 73209 s-50385?rev. a, 07-mar-05 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = ? 250 a ? 60 v gate-threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1.0 ? 2.0 ? 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = ? 60 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 60 v, v gs = 0 v, t j = 125 c ? 50 a g dss v ds = ? 60 v, v gs = 0 v, t j = 175 c ? 150 ? 5 v, v gs = ? 10 v ? 10 a v gs = ? 10 v, i d = ? 5 a 0.125 0.155 drain source on state resistance b r v gs = ? 10 v, i d = ? 5 a, t j = 125 c 0.280 ? 10 v, i d = ? 5 a, t j = 175 c 0.350 v gs = ? 4.5 v, i d = ? 2 a 0.158 0.280 forward transconductance b g fs v ds = ? 15 v, i d = ? 5 a 8 s dynamic input capacitance c iss 450 output capacitance c oss v ds = ? 25 v, v gs = 0 v, f = 1 mhz 65 pf reverse transfer capacitance c rss 40 total gate charge q g 12.5 19 gate-source charge q gs v ds = ? 30 v, v gs = ? 10 v, i d = ? 8.4 a 2.3 nc gate-drain charge q gd ds , gs , d 3.2 gate resistance r g f = 1 mhz 8.0 turn-on delay time c t d(on) 5 10 rise time c t r v dd = ? 30 v, r l = 3.57 14 25 ns turn-off delay time c t d(off) v dd 30 v, r l 3.57 8.4 a, v gen = ? 10 v, r g = 2.5 15 25 ns fall time c t f g 7 12 source-drain diode ratings and characteristics (t c = 25 c) a pulsed current i sm ? 20 a forward voltage b v sd i f = ? 2 a, v gs = 0 v ? 0.9 ? 1.3 v reverse recovery time t rr i f = 8 a di/dt = 100 a/ s 50 80 ns reverse recovery charge q rr i f = ? 8 a, di/dt = 100 a/ s 80 120 nc notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.datasheet.co.kr datasheet pdf - http://www..net/
SUD08P06-155L vishay siliconix new product document number: 73209 s-50385?rev. a, 07-mar-05 www.vishay.com 3 typical characteristics (25 c unless noted) 0 4 8 12 16 20 0 5 10 15 20 25 0.00 0.05 0.10 0.15 0.20 0.25 0.30 048121620 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 100 200 300 400 500 600 700 800 0 102030405060 0 6 12 18 24 30 0246810 0 2 4 6 8 10 12 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 25 c 125 c t c = ? 55 c v ds = 30 v i d = 8.4 a v gs = 10 thru 6 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c 3 v 4 v 5 v v gs = 10 v c iss c oss i d ? drain current (a) www.datasheet.co.kr datasheet pdf - http://www..net/
SUD08P06-155L vishay siliconix new product www.vishay.com 4 document num ber: 73209 s-50385?rev. a, 07-mar-05 typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 0.5 0.8 1.1 1.4 1.7 2.0 2.3 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 10 1 0.001 v gs = 10 v i d = 50 a t j = 25 c t j = 150 c r ds(on) ? on-resiistance (normalized) 0.1 0.01 thermal ratings 0 2 4 6 8 10 0 25 50 75 100 125 150 175 drain current vs. case temperature safe operating area t c ? case temperature ( c) ? drain current (a) i d ? drain current (a) i d 100 10 0.001 0.1 1 10 100 0.1 t c = 25 c single pulse 1 ms 10 ms 100 ms, dc 10 s 100 s *limited by r ds(on) v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified 1 0.01 www.datasheet.co.kr datasheet pdf - http://www..net/
SUD08P06-155L vishay siliconix new product document number: 73209 s-50385?rev. a, 07-mar-05 www.vishay.com 5 thermal ratings 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient normalized effective transient thermal impedance 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance square wave pulse duration (sec) 0.02 vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?73209 . www.datasheet.co.kr datasheet pdf - http://www..net/
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